FQP7N10
MOSFET N-CH 100V 7.3A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQP7N10 is a N-Channel Power MOSFET from the QFET® series, featuring a Drain-Source Voltage (Vdss) of 100V. This through-hole component, packaged in a TO-220-3, offers a continuous drain current (Id) of 7.3A at 25°C and a maximum power dissipation of 40W (Tc). With a typical Rds On of 350mOhm at 3.65A and 10V Vgs, it exhibits low conduction losses. Key parameters include a gate charge (Qg) of 7.5 nC at 10V and input capacitance (Ciss) of 250 pF at 25V. Operating across a temperature range of -55°C to 175°C, this MOSFET is suitable for applications in power supply units, motor control, and general-purpose switching.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 3.65A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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