FQP70N10
MOSFET N-CH 100V 57A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQP70N10 is a QFET® series N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 57A at 25°C (Tc), with a maximum power dissipation of 160W (Tc). The Rds On is specified at a maximum of 23mOhm at 28.5A and 10V gate drive voltage. Key parameters include a low Gate Charge (Qg) of 110 nC @ 10V and Input Capacitance (Ciss) of 3300 pF @ 25V. It utilizes MOSFET technology and is packaged in a TO-220-3 for through-hole mounting. This device is suitable for use in power supply and industrial applications. The operating temperature range is -55°C to 175°C (TJ) and the maximum Gate-Source Voltage (Vgs) is ±25V.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 28.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 25 V |
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