FQP6N60C
MOSFET N-CH 600V 5.5A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQP6N60C is an N-Channel power MOSFET designed for high-voltage applications. Featuring a Drain-Source Voltage (Vdss) of 600V, this component offers a continuous drain current (Id) of 5.5A at 25°C, with a maximum power dissipation of 125W (Tc). The FQP6N60C exhibits a typical Rds On of 2 Ohm at 2.75A and 10V gate drive voltage. Key electrical characteristics include a gate charge (Qg) of 20 nC at 10V and an input capacitance (Ciss) of 810 pF at 25V. This through-hole device, packaged in a TO-220-3, operates across a temperature range of -55°C to 150°C. Its robust specifications make it suitable for power supply units, lighting, and industrial motor control applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 2.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 810 pF @ 25 V |
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