FQP6N60
MOSFET N-CH 600V 6.2A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQP6N60 is a 600V N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a continuous drain current of 6.2A (Tc) and a maximum power dissipation of 130W (Tc). Its low on-resistance, specified as 1.5 Ohm (Max) at 3.1A and 10V Vgs, minimizes conduction losses. The FQP6N60 exhibits a typical input capacitance (Ciss) of 1000 pF at 25V and a gate charge (Qg) of 25 nC at 10V, facilitating efficient switching performance. With a Vgs(th) of 5V at 250µA and a maximum Vgs rating of ±30V, it offers robust gate drive characteristics. Packaged in a TO-220-3 through-hole configuration and operating over a temperature range of -55°C to 150°C, this MOSFET is suitable for use in power supplies, lighting, and motor control systems across various industrial sectors.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 3.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V |
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