FQP6N15
MOSFET N-CH 150V 6.4A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQP6N15 is a 150V N-Channel Power MOSFET designed for general-purpose switching applications. This through-hole component features a continuous drain current of 6.4A (Tc) and a maximum power dissipation of 63W (Tc). Key electrical specifications include a Drain-to-Source Voltage (Vdss) of 150V, a maximum Rds On of 600mOhm at 3.2A and 10V gate drive, and a gate charge (Qg) of 8.5 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 270 pF at 25V. The device is housed in a standard TO-220-3 package, facilitating efficient thermal management. Operating temperature range is from -55°C to 175°C (TJ). This MOSFET is commonly utilized in power supply units, motor control systems, and DC-DC converters across various industrial and consumer electronics sectors.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 25 V |
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