FQP5P10
MOSFET P-CH 100V 4.5A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQP5P10 is a P-Channel MOSFET within the QFET® series, designed for demanding applications. This through-hole component features a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 4.5A at 25°C, with a maximum power dissipation of 40W. The Rds On is specified at a maximum of 1.05 Ohms at 2.25A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 8.2 nC and Input Capacitance (Ciss) of 250 pF, both measured under standard conditions. The operating temperature range is from -55°C to 175°C. This device is commonly utilized in power management, industrial control, and automotive systems. The TO-220-3 package facilitates robust mounting.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 2.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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