FQP5N90
MOSFET N-CH 900V 5.4A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQP5N90 is an N-Channel Power MOSFET from the QFET® series, designed for high voltage applications. This through-hole component features a Drain-Source Voltage (Vdss) of 900V and a continuous drain current (Id) of 5.4A at 25°C. With a maximum power dissipation of 158W (Tc), it offers a low on-resistance (Rds On) of 2.3Ohm at 2.7A and 10V gate drive. The device has a typical gate charge (Qg) of 40nC at 10V and an input capacitance (Ciss) of 1550pF at 25V. The FQP5N90 is suitable for use in power supply units, lighting, and motor control applications. It is supplied in a TO-220-3 package.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3Ohm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 158W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1550 pF @ 25 V |