FQP5N50C
MOSFET N-CH 500V 5A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's QFET® series FQP5N50C is an N-Channel Power MOSFET featuring a drain-source voltage (Vds) of 500V and a continuous drain current (Id) of 5A at 25°C. This through-hole component utilizes MOSFET technology and is housed in a TO-220-3 package. Key parameters include a maximum power dissipation of 73W (Tc), a low on-resistance (Rds On) of 1.4 Ohm at 2.5A and 10V gate-source voltage, and a gate charge (Qg) of 24 nC maximum at 10V. The input capacitance (Ciss) is 625 pF maximum at 25V. This device is suitable for applications in power supply units, motor control, and lighting. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 73W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 625 pF @ 25 V |
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