FQP5N20L
MOSFET N-CH 200V 4.5A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® series FQP5N20L is a 200V N-Channel Power MOSFET designed for efficient power switching applications. This component features a continuous drain current of 4.5A (Tc) and a maximum power dissipation of 52W (Tc). Optimized for low on-resistance, it offers a typical Rds(on) of 1.2 Ohm at 2.25A, 10V. Key electrical characteristics include a gate charge of 6.2 nC (Max) @ 5V and input capacitance of 325 pF (Max) @ 25V. The FQP5N20L operates within a temperature range of -55°C to 150°C (TJ) and is supplied in a standard TO-220-3 through-hole package, commonly utilized in industrial power supplies, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 52W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 325 pF @ 25 V |
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