FQP58N08
MOSFET N-CH 80V 57.5A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® series FQP58N08 is an N-Channel Power MOSFET designed for demanding applications. This through-hole component features a Drain-Source Voltage (Vdss) of 80V and a continuous Drain Current (Id) of 57.5A at 25°C, with a maximum power dissipation of 146W. The low on-resistance of 24mOhm at 28.75A and 10V gate drive, coupled with a gate charge of 65 nC, ensures efficient switching performance. Key parameters include a Vgs(th) of 4V at 250µA and input capacitance (Ciss) of 1900 pF at 25V. The TO-220-3 package facilitates robust thermal management. This MOSFET is suitable for use in power supply, motor control, and industrial automation applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 57.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 28.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 146W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
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