FQP50N06L
MOSFET N-CH 60V 52.4A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FQP50N06L is an N-Channel Power MOSFET from the QFET® series. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 52.4A at 25°C (Tc), with a maximum power dissipation of 121W (Tc). The Rds On is specified at a maximum of 21mOhm at 26.2A and 10V Vgs. Gate charge (Qg) is 32 nC at 5V Vgs, and input capacitance (Ciss) is 1630 pF at 25V Vds. The device operates across a temperature range of -55°C to 175°C (TJ). Packaged in a TO-220-3 through-hole configuration, this MOSFET is suitable for applications in power management, motor control, and industrial power supplies.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 52.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 26.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 121W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1630 pF @ 25 V |
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