FQP50N06
MOSFET N-CH 60V 50A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQP50N06 is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current capability of 50A at 25°C (Tc). With a low on-resistance (Rds On) of 22mOhm at 25A and 10V Vgs, it minimizes conduction losses. The device offers a maximum power dissipation of 120W (Tc) and operates within an extended temperature range of -55°C to 175°C (TJ). Key electrical parameters include a gate charge (Qg) of 41 nC at 10V and input capacitance (Ciss) of 1540 pF at 25V. The FQP50N06 is housed in a standard TO-220-3 through-hole package, making it suitable for power supply units, motor control, and industrial automation systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1540 pF @ 25 V |
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