FQP4P25
MOSFET P-CH 250V 4A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQP4P25 is a P-Channel MOSFET from the QFET® series, available in a TO-220-3 package. This component features a Drain-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 4A at 25°C case temperature. The on-resistance (Rds On) is specified at a maximum of 2.1 Ohms at 2A, 10V. With a Power Dissipation (Pd) of 75W (Tc) and a Gate Charge (Qg) of 14 nC at 10V, this device is suitable for various power management applications. Its input capacitance (Ciss) is rated at 420 pF maximum at 25V. The operating temperature range is -55°C to 150°C. This MOSFET is commonly utilized in industrial and consumer electronics sectors.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 25 V |
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