FQP4N60
MOSFET N-CH 600V 4.4A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FQP4N60 is a QFET® series N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 600V. This device offers a continuous drain current (Id) of 4.4A (Tc) and a maximum power dissipation of 106W (Tc). Key parameters include a low on-resistance (Rds On) of 2.2 Ohms maximum at 2.2A, 10V, and a gate charge (Qg) of 20 nC maximum at 10V. The input capacitance (Ciss) is 670 pF maximum at 25V. Packaged in a TO-220-3 through-hole configuration, this MOSFET is suitable for applications in power supply units, lighting, and motor control. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 106W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 25 V |
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