FQP4N50
MOSFET N-CH 500V 3.4A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi FQP4N50 is a QFET® series N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 500V. This through-hole component, packaged in a TO-220-3, offers a continuous drain current (Id) of 3.4A (Tc) and a maximum power dissipation of 70W (Tc). Key electrical characteristics include a maximum Rds On of 2.7 Ohm at 1.7A and 10V, Gate Charge (Qg) of 13 nC at 10V, and Input Capacitance (Ciss) of 460 pF at 25V. The device features a gate-source voltage (Vgs) tolerance of ±30V and a threshold voltage (Vgs(th)) of 5V at 250µA. This MOSFET is suitable for applications in power supply, motor control, and lighting.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7Ohm @ 1.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 25 V |
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