FQP4N20
MOSFET N-CH 200V 3.6A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQP4N20 is a QFET® series N-Channel Power MOSFET designed for demanding applications. This through-hole component features a Drain-Source Voltage (Vdss) of 200V and a continuous drain current (Id) of 3.6A at 25°C. With a maximum power dissipation of 45W at 25°C (Tc), it offers a low On-Resistance (Rds On) of 1.4 Ohm at 1.8A and 10V gate drive. Key parameters include a gate charge (Qg) of 6.5 nC at 10V and input capacitance (Ciss) of 220 pF at 25V. The device operates across a wide temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power supply units, motor control, and lighting applications. The component is packaged in a TO-220-3 configuration.
Additional Information
Series: QFET®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 220 pF @ 25 V |
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