FQP47P06
MOSFET P-CH 60V 47A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi QFET® FQP47P06 is a P-Channel MOSFET with a Drain-to-Source Voltage (Vdss) of 60V. This through-hole component, packaged in a TO-220-3, offers a continuous drain current of 47A at 25°C (Tc) and a maximum power dissipation of 160W (Tc). Key electrical characteristics include a maximum Rds On of 26mOhm at 23.5A and 10V, a gate charge (Qg) of 110 nC at 10V, and input capacitance (Ciss) of 3600 pF at 25V. The threshold gate-source voltage (Vgs(th)) is 4V at 250µA, with a maximum gate-source voltage (Vgs) of ±25V. This device operates across a temperature range of -55°C to 175°C (TJ). It finds application in power management, battery charging, and motor control systems within industrial and automotive sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 23.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
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