FQP46N15
MOSFET N-CH 150V 45.6A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FQP46N15 is a QFET® series N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 150 V and a continuous Drain Current (Id) of 45.6 A at 25°C (Tc), with a maximum power dissipation of 210 W (Tc). The Rds On is specified at a maximum of 42 mOhm at 22.8 A and 10 V gate drive. Key parameters include a Gate Charge (Qg) of 110 nC at 10 V and an input capacitance (Ciss) of 3250 pF at 25 V. The device utilizes TO-220-3 through-hole packaging and operates across a temperature range of -55°C to 175°C (TJ). Typical industrial applications include power management, motor control, and power supply units.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 22.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 210W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3250 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
