FQP44N10F
MOSFET N-CH 100V 43.5A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQP44N10F is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) rating of 43.5A at 25°C. With a maximum power dissipation of 146W (Tc) and a low on-resistance (Rds On) of 39mOhm at 21.75A and 10V, it offers excellent conduction performance. The device boasts a gate charge (Qg) of 62 nC at 10V and an input capacitance (Ciss) of 1800 pF at 25V, facilitating efficient switching. Packaged in a standard TO-220-3 through-hole configuration, the FQP44N10F is suitable for demanding applications in power supplies, motor control, and industrial automation. It operates across a wide temperature range of -55°C to 175°C (TJ).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 21.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 146W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
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