FQP3P20
MOSFET P-CH 200V 2.8A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQP3P20 is a P-Channel QFET® power MOSFET designed for demanding applications requiring high voltage and efficient switching. This component features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 2.8A at 25°C, with a maximum power dissipation of 52W (Tc). The Rds On is specified at a maximum of 2.7 Ohms at 1.4A and 10V gate drive, with a typical Gate Charge (Qg) of 8 nC at 10V. Input capacitance (Ciss) is a maximum of 250 pF at 25V. The device utilizes MOSFET technology and is housed in a standard TO-220-3 through-hole package. This component is suitable for use in power supply circuits, motor control, and general-purpose switching applications across various industrial sectors. Operating temperature range is -55°C to 150°C (TJ) with a maximum Gate-Source Voltage (Vgs) of ±30V.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7Ohm @ 1.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 52W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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