FQP3N80
MOSFET N-CH 800V 3A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQP3N80 is an N-Channel Power MOSFET designed for high voltage applications. This through-hole component features a drain-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 3 A at 25°C. The device offers a maximum on-resistance (Rds On) of 5 Ohm at 1.5 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 19 nC and input capacitance (Ciss) of 690 pF, both specified at 10 V and 25 V respectively. With a maximum power dissipation of 107 W at 25°C (Tc), the FQP3N80 is suitable for power supply units, lighting, and industrial motor control applications. The TO-220-3 package facilitates easy mounting and thermal management.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 690 pF @ 25 V |
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