FQP3N60C
MOSFET N-CH 600V 3A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi QFET® FQP3N60C is a 600V N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a continuous drain current of 3A (Tc) at 25°C and a maximum power dissipation of 75W (Tc). With a low on-resistance of 3.4 Ohms at 1.5A and 10V Vgs, it offers reduced conduction losses. Key parameters include a gate charge of 14 nC (Max) @ 10V and input capacitance of 565 pF (Max) @ 25V. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a standard TO-220-3 package suitable for through-hole mounting. This MOSFET is commonly utilized in power supplies, lighting, and motor control applications within the industrial and consumer electronics sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 565 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
