FQP3N50C-F080
MOSFET N-CH 500V 1.8A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQP3N50C-F080 is a 500V N-Channel MOSFET designed for high-efficiency power switching applications. This component features a continuous drain current of 1.8A (Tc) and a maximum power dissipation of 62W (Tc). The low on-resistance of 2.5Ohm (max) at 1.5A, 10V, coupled with a gate charge of 13nC (max) at 10V, facilitates efficient switching performance. With a drain-to-source voltage (Vdss) of 500V and a gate-source voltage (Vgs) tolerance of ±30V, it is suitable for demanding power conversion circuits. The FQP3N50C-F080 is packaged in a TO-220-3 through-hole configuration, making it ideal for use in industries such as industrial automation, consumer electronics, and telecommunications. It operates within an ambient temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 365 pF @ 25 V |
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