FQP3N40
MOSFET N-CH 400V 2.5A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQP3N40 is a QFET® series N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 400V and a continuous Drain Current (Id) of 2.5A at 25°C, with a maximum Power Dissipation of 55W. It exhibits a low on-resistance (Rds On) of 3.4 Ohms maximum at 1.25A and 10V gate drive. The MOSFET utilizes Metal Oxide technology and is housed in a standard TO-220-3 through-hole package. Key parameters include a Gate Charge (Qg) of 7.5 nC and Input Capacitance (Ciss) of 230 pF, both specified at 10V and 25V respectively. This component is suitable for use in power supply units, motor control, and lighting applications. The operating temperature range is -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4Ohm @ 1.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 25 V |
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