FQP3N30
MOSFET N-CH 300V 3.2A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FQP3N30, a QFET® series N-Channel Power MOSFET, offers a 300V drain-source voltage and a continuous drain current of 3.2A at 25°C. This through-hole component, housed in a TO-220-3 package, features a maximum on-resistance of 2.2 Ohms at 1.6A and 10V gate-source voltage. With a gate charge of 7 nC (max) at 10V and input capacitance of 230 pF (max) at 25V, it is suitable for applications requiring efficient switching. The device supports a ±30V gate-source voltage range and a threshold voltage of 5V at 250µA. Its maximum power dissipation is 55W (Tc), and it operates across a temperature range of -55°C to 150°C (TJ). This component finds application in power supply units, motor control, and general-purpose power switching across various industrial sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 1.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 25 V |
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