FQP3N25
MOSFET N-CH 250V 2.8A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQP3N25 is an N-Channel Power MOSFET from the QFET® series, designed for high-performance switching applications. This device features a Drain-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 2.8A at 25°C. Its low On-Resistance (Rds On) of 2.2 Ohms maximum at 1.4A and 10V gate drive ensures efficient power transfer. With a gate charge (Qg) of 5.2 nC and input capacitance (Ciss) of 170 pF, it offers optimized switching characteristics. The MOSFET is packaged in a standard TO-220-3 through-hole configuration, facilitating ease of integration into various circuit designs. It boasts a maximum power dissipation of 45W at 25°C (Tc) and operates within an extended temperature range of -55°C to 150°C (TJ). This component is commonly utilized in power supply units, motor control, and general-purpose switching applications across industrial and consumer electronics sectors.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 1.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
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