FQP34N20L
MOSFET N-CH 200V 31A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQP34N20L is an N-Channel QFET® series MOSFET designed for high-efficiency power switching applications. This TO-220-3 packaged component offers a continuous drain current of 31A (Tc) at 25°C and a drain-to-source voltage (Vdss) of 200V. It features a maximum on-resistance (Rds On) of 75mOhm at 15.5A, 10V, with a gate drive voltage range of 5V to 10V. Key parameters include a gate charge (Qg) of 72 nC at 5V and input capacitance (Ciss) of 3900 pF at 25V. With a maximum power dissipation of 180W (Tc), this device is suitable for industrial power supplies, motor control, and lighting applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 15.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V |
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