FQP34N20
MOSFET N-CH 200V 31A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQP34N20 is a QFET® series N-Channel MOSFET designed for high-performance applications. This through-hole component features a Drain-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 31 A at 25°C. With a maximum power dissipation of 180 W (Tc) and an Rds On rating of 75 mOhm at 15.5 A and 10 V, it offers efficient power handling. The gate drive voltage requirement is 10V, with a maximum Gate-Source Voltage (Vgs) of ±30V. Key electrical parameters include a maximum input capacitance (Ciss) of 3100 pF at 25 V and a gate charge (Qg) of 78 nC at 10 V. This MOSFET is suitable for use in power supply, motor control, and lighting applications, operating within an ambient temperature range of -55°C to 150°C (TJ). The component is supplied in a TO-220-3 package.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 15.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 25 V |
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