FQP30N06L
MOSFET N-CH 60V 32A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® series FQP30N06L is a 60V N-Channel MOSFET designed for power switching applications. This component features a continuous drain current of 32A (Tc) and a maximum power dissipation of 79W (Tc). With a low on-resistance of 35mOhm @ 16A, 10V, it offers efficient power transfer. The FQP30N06L utilizes MOSFET technology and is housed in a TO-220-3 package, suitable for through-hole mounting. Key electrical characteristics include a gate charge of 20 nC @ 5V and input capacitance of 1040 pF @ 25V. It operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is commonly employed in industrial, automotive, and consumer electronics sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040 pF @ 25 V |
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