FQP2P40-F080
MOSFET P-CH 400V 2A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQP2P40-F080 is a P-Channel power MOSFET with a Drain-Source Voltage (Vdss) of 400 V and a continuous drain current (Id) of 2 A at 25°C. This through-hole component, housed in a TO-220-3 package, offers a maximum power dissipation of 63 W (Tc) and a low Rds On of 6.5 Ohm at 1 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 13 nC at 10 V and input capacitance (Ciss) of 350 pF at 25 V. The device operates across a temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±30V. This MOSFET is suitable for power supply applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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