FQP2N60C
MOSFET N-CH 600V 2A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's QFET® series FQP2N60C is a 600V, 2A N-Channel Power MOSFET designed for efficient switching applications. This through-hole component features a low Rds(on) of 4.7 Ohm at 1A, 10V, and a low gate charge of 12 nC at 10V, contributing to reduced switching losses. The FQP2N60C is housed in a standard TO-220-3 package, offering robust thermal performance with a maximum power dissipation of 54W (Tc). Key electrical characteristics include a Vgs(th) of 4V at 250µA and a maximum Vgs rating of ±30V. This MOSFET is suitable for use in power supply units, inverters, and motor control systems across various industrial and consumer electronics sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 54W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 235 pF @ 25 V |
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