FQP2N40-F080
MOSFET N-CH 400V 1.8A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi QFET® FQP2N40-F080 is an N-channel MOSFET designed for robust performance in demanding applications. Featuring a Drain-Source Voltage (Vdss) of 400V and a continuous Drain Current (Id) of 1.8A at 25°C (Tc), this component offers efficient switching characteristics. The Rds On is specified at a maximum of 5.8 Ohms at 900mA and 10V Vgs. With a low gate charge of 5.5 nC at 10V and an input capacitance of 150 pF at 25V, it facilitates fast switching speeds. The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 40W (Ta). Packaged in a standard TO-220-3 through-hole configuration, the FQP2N40-F080 is suitable for use in power supply units, lighting, and motor control systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8Ohm @ 900mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Ta) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
