FQP2N40
MOSFET N-CH 400V 1.8A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi FQP2N40 is a QFET® series N-Channel Power MOSFET. This component features a Drain-Source Voltage (Vdss) of 400 V and a continuous Drain Current (Id) of 1.8A at 25°C. The Rds On is specified as a maximum of 5.8 Ohms at 900mA and 10V gate drive. The device offers a maximum power dissipation of 40W (Tc) and a gate charge (Qg) of 5.5 nC at 10V. With an input capacitance (Ciss) of 150 pF at 25V, it is suitable for applications in power supplies, motor control, and lighting. The FQP2N40 is housed in a TO-220-3 package for through-hole mounting and operates within a temperature range of -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8Ohm @ 900mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 25 V |
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