FQP2N30
MOSFET N-CH 300V 2.1A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQP2N30 is an N-Channel QFET® series MOSFET designed for power applications. This device features a 300V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 2.1A at 25°C. With a maximum power dissipation of 40W (Tc), it is suitable for use in power supplies, motor control, and lighting applications. The FQP2N30 offers a low on-resistance of 3.7 Ohms maximum at 1.05A and 10V gate-source voltage. Its TO-220-3 through-hole package facilitates easy mounting. Key electrical characteristics include a gate charge (Qg) of 5 nC maximum at 10V and an input capacitance (Ciss) of 130 pF maximum at 25V. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7Ohm @ 1.05A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 130 pF @ 25 V |
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