FQP27N25
MOSFET N-CH 250V 25.5A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FQP27N25 is a N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 250 V and a continuous Drain Current (Id) of 25.5 A at 25°C (Tc). Its low on-resistance (Rds On) of 110mOhm at 12.75A and 10V drive voltage minimizes conduction losses. The device offers a maximum power dissipation of 180W (Tc) and a gate charge (Qg) of 65 nC at 10 V. Operating across a temperature range of -55°C to 150°C (TJ), it is housed in a standard TO-220-3 through-hole package, suitable for robust thermal management. This MOSFET finds application in power supplies, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 12.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2450 pF @ 25 V |
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