FQP22P10
MOSFET P-CH 100V 22A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQP22P10 is a P-Channel QFET® MOSFET designed for power switching applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 22A at 25°C. With a maximum power dissipation of 125W (Tc), it is suitable for demanding thermal environments. The Rds On is specified at a maximum of 125mOhm at 11A and 10V Vgs. Key parameters include a gate charge (Qg) of 50 nC @ 10V and input capacitance (Ciss) of 1500 pF @ 25V. The FQP22P10 utilizes through-hole mounting in a TO-220-3 package. Operating temperature ranges from -55°C to 175°C (TJ). This device finds application in various industries including industrial power supplies, motor control, and automotive electronics.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V |
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