FQP22N30
MOSFET N-CH 300V 21A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FQP22N30, a QFET® series N-Channel MOSFET, offers a 300V drain-source breakdown voltage and 21A continuous drain current at 25°C. This component features a maximum on-resistance of 160mOhm at 10.5A and 10V gate-source voltage. With a gate charge of 60nC at 10V and input capacitance of 2200pF at 25V, it is suitable for demanding applications. The TO-220-3 package facilitates through-hole mounting and provides a maximum power dissipation of 170W at 25°C. Operating temperature range is -55°C to 150°C. This device is utilized in power supply, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 10.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
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