FQP1N60
MOSFET N-CH 600V 1.2A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQP1N60 is a 600 V N-Channel Power MOSFET in a TO-220-3 package. This device offers a continuous drain current of 1.2 A at 25°C and a maximum power dissipation of 40 W (Tc). With a low on-resistance of 11.5 Ohms at 600 mA and 10 V gate drive, it features a gate charge of 6 nC (max) and input capacitance of 150 pF (max). Operating temperature ranges from -55°C to 150°C. This component is commonly utilized in power supply units, lighting, and motor control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.5Ohm @ 600mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 25 V |
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