FQP1N50
MOSFET N-CH 500V 1.4A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi FQP1N50, a QFET® series N-Channel MOSFET, offers a Drain-to-Source Voltage (Vdss) of 500 V and a continuous drain current (Id) of 1.4A at 25°C. This through-hole component, housed in a TO-220-3 package, features a maximum power dissipation of 40W (Tc) and a typical Rds On of 9 Ohms at 700mA and 10V gate drive. Key parameters include a 5.5 nC gate charge and 150 pF input capacitance. The operating temperature range is -55°C to 150°C (TJ). This device is commonly utilized in power supply, motor control, and lighting applications within the industrial and consumer electronics sectors.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 9Ohm @ 700mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 25 V |
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