FQP19N20CTSTU
MOSFET N-CH 200V 19A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® series FQP19N20CTSTU is a 200V N-Channel Power MOSFET. This component features a continuous drain current of 19A (Tc) and a maximum power dissipation of 139W (Tc). It has a low Rds(on) of 170mOhm at 9.5A and 10V Vgs. Key parameters include a gate charge of 53 nC @ 10V and input capacitance of 1080 pF @ 25V. The device operates within a temperature range of -55°C to 150°C (TJ). Packaged in a TO-220-3 through-hole configuration, this MOSFET is suitable for applications in power supply, motor control, and general-purpose switching.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 139W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 25 V |
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