FQP19N20
MOSFET N-CH 200V 19.4A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FQP19N20 is a QFET® series N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 19.4 A at 25°C (Tc). With a maximum power dissipation of 140 W (Tc), it offers low on-resistance of 150 mOhm at 9.7 A and 10 V gate drive. The FQP19N20 has a typical gate charge of 40 nC at 10 V and input capacitance (Ciss) of 1600 pF at 25 V. Its TO-220-3 through-hole package is suitable for demanding thermal management. This MOSFET is commonly utilized in power supplies, motor control, and lighting applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 9.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |