FQP17N40
MOSFET N-CH 400V 16A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi QFET® FQP17N40 is a 400 V N-Channel MOSFET in a TO-220-3 package. This component offers a continuous drain current of 16A (Tc) and a maximum power dissipation of 170W (Tc). Key electrical characteristics include a Drain to Source Voltage (Vdss) of 400 V and a typical Rds On of 270mOhm @ 8A, 10V. The gate drive voltage is specified at 10V for Rds On. Input capacitance (Ciss) is 2300 pF @ 25 V, with a gate charge (Qg) of 60 nC @ 10 V. The operating temperature range is -55°C to 150°C. This device is suitable for applications in power supplies, motor control, and lighting.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 25 V |
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