FQP13N10
MOSFET N-CH 100V 12.8A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQP13N10 is a QFET® series N-Channel Power MOSFET designed for high-efficiency switching applications. This through-hole component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 12.8A at 25°C. The Rds(on) is specified at a maximum of 180mOhm at 6.4A and 10V gate drive. With a maximum power dissipation of 65W (Tc) and a wide operating temperature range of -55°C to 175°C, the FQP13N10 offers robust performance. Key parameters include a Gate Charge (Qg) of 16 nC at 10V and input capacitance (Ciss) of 450 pF at 25V. This MOSFET is commonly utilized in power supplies, motor control, and lighting applications. The TO-220-3 package facilitates easy board mounting.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 6.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 25 V |
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