FQP13N06L
MOSFET N-CH 60V 13.6A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQP13N06L from the QFET® series is a N-Channel Power MOSFET designed for efficient power switching applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 13.6A at 25°C, with a maximum power dissipation of 45W (Tc). The FQP13N06L offers a low on-resistance (Rds On) of 110mOhm maximum at 6.8A and 10V gate-source voltage. Key electrical characteristics include a gate charge (Qg) of 6.4 nC maximum at 5V and input capacitance (Ciss) of 350 pF maximum at 25V. It operates across a wide temperature range of -55°C to 175°C (TJ) and is housed in a standard TO-220-3 through-hole package. This device is suitable for use in power supplies, motor control, and general-purpose power switching applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 6.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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