FQP12P20
MOSFET P-CH 200V 11.5A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FQP12P20 is a P-Channel QFET® MOSFET designed for power switching applications. This through-hole component features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 11.5A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 470mOhm at 5.75A and 10V gate drive. Key parameters include input capacitance (Ciss) of 1200pF and gate charge (Qg) of 40nC, both measured at specified voltages. The FQP12P20 has a maximum power dissipation of 120W at the case temperature and operates within an industrial temperature range of -55°C to 150°C. It is supplied in a TO-220-3 package. This MOSFET is commonly utilized in power supplies, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 470mOhm @ 5.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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