FQP12P10
MOSFET P-CH 100V 11.5A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQP12P10 is a P-Channel MOSFET from the QFET® series, designed for high-efficiency power switching applications. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 11.5A at 25°C, with a maximum power dissipation of 75W. The Rds On is specified at a maximum of 290mOhm at 5.75A and 10V gate drive. Key parameters include a 10V gate drive voltage, ±30V maximum Gate-Source voltage, and a threshold voltage (Vgs(th)) of 4V at 250µA. Input capacitance (Ciss) is 800pF and gate charge (Qg) is 27nC, both at specified voltages. Packaged in a TO-220-3 through-hole configuration, this component is suitable for demanding applications across industrial power supplies, motor control, and lighting systems. It operates within an ambient temperature range of -55°C to 175°C.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 5.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V |
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