FQP10N60C
MOSFET N-CH 600V 9.5A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® series FQP10N60C is a 600V N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a continuous drain current of 9.5A at 25°C and a maximum power dissipation of 156W (Tc). With a drain-to-source breakdown voltage (Vdss) of 600V, it is suitable for demanding power conversion circuits. The FQP10N60C offers a low on-resistance (Rds On) of 730mOhm at 4.75A, 10V, and a gate charge (Qg) of 57 nC at 10V. Its TO-220-3 through-hole package facilitates robust mounting and thermal management. This device is commonly utilized in power supply units, lighting, and motor control systems.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 730mOhm @ 4.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2040 pF @ 25 V |