FQP10N20CTSTU
MOSFET N-CH 200V 9.5A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQP10N20CTSTU is an N-Channel QFET® MOSFET designed for high-efficiency power switching applications. This device features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 9.5A at 25°C, with a maximum power dissipation of 72W (Tc). The Rds On is specified at a maximum of 360mOhm at 4.75A, 10V. Key parameters include a Gate Charge (Qg) of 26 nC (Max) @ 10V and Input Capacitance (Ciss) of 510 pF (Max) @ 25V. The device operates within a temperature range of -55°C to 150°C (TJ) and is presented in a TO-220-3 through-hole package, supplied in tube packaging. This component is utilized in industries such as industrial power supplies and motor control.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 4.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 72W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V |
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