FQP10N20
MOSFET N-CH 200V 10A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FQP10N20 is a QFET® series N-Channel Power MOSFET designed for robust performance. This through-hole component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 10A at 25°C. The FQP10N20 offers a low on-resistance (Rds On) of 360mOhm at 5A, 10V, and a gate charge (Qg) of 18 nC maximum at 10V. With a maximum power dissipation of 87W (Tc) and operating temperature range of -55°C to 150°C (TJ), it is suitable for applications in power supplies, motor control, and lighting. The TO-220-3 package ensures reliable thermal management in demanding environments.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 87W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
