FQN1N60CTA
MOSFET N-CH 600V 300MA TO92-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQN1N60CTA is an N-Channel Power MOSFET designed for efficient switching applications. This device features a Drain-to-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 300mA at 25°C (Tc). It offers a maximum on-resistance (Rds On) of 11.5 Ohms at 150mA and 10V gate drive. Key parameters include a gate charge (Qg) of 6.2 nC (max) at 10V and an input capacitance (Ciss) of 170 pF (max) at 25V. The FQN1N60CTA is housed in a TO-92-3 package with through-hole mounting and a maximum power dissipation of 1W (Ta) or 3W (Tc). This component is utilized in various industries including power supplies, lighting, and industrial controls. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Tc) |
| Rds On (Max) @ Id, Vgs | 11.5Ohm @ 150mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 3W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-92-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
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